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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1179 TRANSISTOR (PNP) Plastic-Encapsulate Transistors SOT-23 FEATURES . High breakdown voltage MARKING: M 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol VCBO VCEO VEBO IC PD TJ, Tstg Parameter Value -55 -50 -5 -150 200 -55-125 Units V V V mA mW Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction and Storage Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25 unless Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base -emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Test otherwise specified) MIN -55 -50 -5 -0.1 -0.1 200 400 -0.5 -1.0 180 4 V V MHz pF TYP MAX UNIT V V V uA uA conditions Ic=-10u A,IE=0 Ic=-1mA,IB=0 IE=-10 u A,IC=0 VCB=-35V,IE=0 VEB=-4V,IC=0 VCE=-6V,IC=-1mA IC=-50mA,IB=-5mA IC=-50mA,IB=-5mA VCE=-6V,IC=-10mA VCB=-6V,IE=0,f=1MHz |
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